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inchange semiconductor product specification silicon npn power transistors 2SD1180 description ? with to-126 package ? low collector saturation voltage applications ? designed for use in audio and radio frequency power amplifiers pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 110 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 2.5 a t a =25 ?? 1.2 p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1180 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 110 v v (br)cbo collector-base breakdown voltage i c =100 | a; i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =100 | a ; i c =0 5 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 0.7 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.3 v i cbo collector cut-off current v cb =120v; i e =0 1.0 | a i ebo emitter cut-off current v eb =3v; i c =0 1.0 | a h fe dc current gain i c =150ma ; v ce =5v 100
inchange semiconductor product specification 3 silicon npn power transistors 2SD1180 package outline fig.2 outline dimensions

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